Method of forming a light emitting diode emitter substrate with highly reflective metal bonding
US8236584B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2011 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Feb 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.