Method for manufacturing a multi-wavelength integrated semiconductor laser
US8236588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2006 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Nov 15, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An object is to provide a multi-wavelength integrated semiconductor laser device which can reduce variations in emission point distance, can be formed by simplified manufacturing processes, and can provide improve electric characteristics.A first semiconductor laser element 100 having an active layer AL1 for emitting a laser beam of a first wavelength from its light-emitting point X1 and a second semiconductor laser element 200 having an active layer AL2 for emitting a laser beam of a second wavelength from its light-emitting point X2 are bonded to each other via an adhesive layer MC made of metal. At least either one of the semiconductor laser elements has a ridge waveguide made of an n-type semiconductor. The semiconductor laser elements 100 and 200 are bonded via the metal adhesive layer MC at the sides of their respective p-type semiconductors. A submount SUB is bonded to the first semiconductor laser element 100 via metal at a side where its ridge waveguide is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.