Solution-based process for making inorganic materials
US8236599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2010 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Jul 21, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed embodiments provide a solution-based process for producing useful materials, such as semiconductor materials. One disclosed embodiment comprises providing at least a first reactant and a second reactant in solution and applying the solution to a substrate. The as-deposited material is thermally annealed to form desired compounds. Thermal annealing may be conducted under vacuum; under an inert atmosphere; or under a reducing environment. The method may involve using metal and chalcogen precursor compounds. One example of a metal precursor compound is a metal halide. Examples of suitable chalcogen precursor compounds include a chalcogen powder, a chalcogen halide, a chalcogen oxide, a chalcogen urea, a chalcogen or dichalcogen comprising organic ligands, or combinations thereof. Certain disclosed embodiments concern a method for making a solar cell from I-III-VI semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.