Die singulation method and package formed thereby
US8236611B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2010 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Oct 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for singulating die from a substrate having a sacrificial layer and one or more device layers, with a retainer being formed in the device layer(s) and anchored to the substrate. Deep Reactive Ion Etching (DRIE) etching of a trench through the substrate from the bottom side defines a shape for each die. A handle wafer is then attached to the bottom side of the substrate, and the sacrificial layer is etched to singulate the die and to form a frame from the retainer and the substrate. The frame and handle wafer, which retain the singulated die in place, can be attached together with a clamp or a clip and to form a package for the singulated die. One or more stops can be formed from the device layer(s) to limit a sliding motion of the singulated die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.