Semiconductor device and process for producing same
US8236666B2 · kind B2 · utility
1Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2007 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Aug 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/09881
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including: a base plate; a thermally conductive resin layer formed on an upper surface of the base plate; an integrated layer which is formed on an upper surface of the thermally conductive resin layer, and includes an electrode and an insulating resin layer covering all side surfaces of the electrode; and a semiconductor element formed on an upper surface of the electrode, in which the integrated layer is thermocompression bonded to the base plate through the thermally conductive resin layer. This semiconductor device excels in insulating properties and reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.