Method of manufacturing semiconductor device
US8236671B2 · kind B2 · utility
0Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2011 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Mar 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device including a nitride semiconductor layer having high-precision thickness is provided. The method includes steps of: forming a gallium nitride (GaN) layer whose main face is a +c face on a substrate; forming a trench by selectively etching down a partial region in the +c face of the GaN layer; forming a metal layer so as to bury the trench; and separating the substrate and the GaN layer, after that, polishing a −c face of the GaN layer until the metal layer is exposed, and removing a part in a thickness direction of the GaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.