Nanoscale, spatially-controlled Ga doping of undoped transparent conducting oxide films
US8236680B2 · kind B2 · utility
3Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2009 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Oct 18, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An article of manufacture comprising a nanowire and methods of making the same. In one embodiment, the nanowire includes a Ga-doped trace formed on a surface of an indium oxide layer having a thickness in nano-scale, and wherein the Ga-doped trace is formed with a dimension that has a depth is less than a quarter of the thickness of the indium oxide layer. In one embodiment, the indium oxide layer, which is optically transparent and electrically insulating, comprises an In2O3 film, and the thickness of the indium oxide layer is about 40 nm, and the depth of the nanowire is less than 10 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.