Method for applying a structure to a semiconductor element
US8236689B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2007 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Apr 24, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for applying a predetermined structure of a structural material to a semiconductor element. The method includes the following steps: A) partially covering a surface of the semiconductor element with a masking layer, B) applying a film of a structural material to the masking layer and to the surface of the semiconductor element in the zones that are devoid of the masking layer and C) removing the masking layer together with the structural material present on the masking layer. The method according to the invention provides that between process steps B and C, the film of structural material is partially removed in a process step B2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.