Methods for removing contaminants from aluminum-comprising bond pads and integrated circuits therefrom
US8236703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2008 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Jan 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1461
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for removing contaminants from a semiconductor device that includes a plurality of aluminum-comprising bond pads on a semiconductor surface of a substrate. A plurality of aluminum-including bond pads are formed on the semiconductor surface of the substrate. A patterned passivation layer is then formed on the semiconductor surface, wherein the patterned passivation layer provides an exposed area for the plurality of bond pads. Wet etching with a basic etch solution is used to etch a surface of the exposed area of the aluminum-including bond pads, wherein the wet etching removes at least 100 Angstroms from the surface of the bond pads to form a cleaned surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.