Nonvolatile memory device with recording layer having two portions of different nitrogen amounts
US8237145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2010 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Dec 8, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/734
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a nonvolatile memory device includes a stacked body including a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer. The recording layer is capable of reversibly changing between a first state and a second state having a resistance higher than a resistance in the first state by a current supplied via the first layer and the second layer. The recording layer includes a first portion and a second portion provided in a plane of a major surface of the recording layer. The second portion has a nitrogen amount higher than a nitrogen amount in the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.