Patent · US Active

Light emitting diode chip with overvoltage protection

US8237192B2 · kind B2 · utility

1Cited by

4References

19Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Joerg Sorg · Regensburg, DE
Stefan Gruber · Bad Abbach, DE
Georg Bogner · Lappersdorf, DE

Key dates

Filing date	Dec 9, 2008
Grant date	Aug 7, 2012
Priority date	—
Expiry date	Apr 19, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3011
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A light emitting diode chip includes a device for protection against overvoltages, e.g., an ESD protection device. The ESD protection device is integrated into a carrier, on which the semiconductor layer sequence of the light emitting diode chip is situated, and is based on a specific doping of specific regions of said carrier. By way of example, the ESD protection device is embodied as a Zener diode that is connected to the semiconductor layer sequence by means of an electrical conductor structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.