Patent · US Active

Method for passivating a field-effect transistor

US8237204B2 · kind B2 · utility

0Cited by

5References

4Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Richard Fix · Gerlingen, DE
Oliver Wolst · Walzbachtal, DE
Stefan Henneck · Gerlingen, DE
Alexander Martin · Regensburg, DE
Martin Le-Huu · Ditzingen, DE

Key dates

Filing date	Nov 16, 2009
Grant date	Aug 7, 2012
Priority date	—
Expiry date	Feb 26, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/60
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The present invention relates to a method for passivating a semiconductor component having at least one chemosensitive electrode that is blinded by the application of a glass layer. The present invention also relates to a device for detecting at least one substance included in a fluid stream, including at least one semiconductor component acting as a measuring sensor as well as at least one semiconductor component acting as a reference element, the semiconductor components each having a chemosensitive electrode, and the chemosensitive electrode of the semiconductor component acting as the reference element being passivated. For the passivation, a glass layer may be applied at least to the chemosensitive electrode of the semiconductor component acting as reference element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.