Device with aluminum surface protection
US8237231B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2011 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Dec 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure with a metal gate structure includes a first type field-effect transistor having a first gate including: a high k dielectric material on a substrate, a first metal layer on the high k dielectric material layer and having a first work function, and a first aluminum layer on the first metal layer. The first aluminum layer includes an interfacial layer including aluminum, nitrogen and oxygen. The device also includes a second type field-effect transistor having a second gate including: the high k dielectric material on the substrate, a second metal layer on the high k dielectric material layer and having a second work function different from the first work function, and a second aluminum layer on the second metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.