Magnetoresistive sensor with synthetic antiferromagnetic cap or seed layers
US8238063B2 · kind B2 · utility
8Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2009 |
| Grant date | Aug 7, 2012 |
| Priority date | — |
| Expiry date | Nov 12, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1193
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetic sensor assembly including first and second shields, and a sensor stack between the first and second shields. The sensor stack includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer, wherein at least one of the seed layer and the cap layer has a synthetic antiferromagnetic structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.