Relaxor-PT ferroelectric single crystals
US8241519B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 16, 2010 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Mar 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/095
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A <110> domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(B1B2)O3—Pb(B3)O3, where B1 may be one ion or combination of Mg2+, Zn2+, Ni2+, Sc3+, In3+, Yb3+, B2 may be one ion or combination of Nb5+, Ta5+, W6+, and B3 may be Ti4+ or combination of Ti4+ with Zr4+ and/or Hf4+.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.