Patent · US Active

Relaxor-PT ferroelectric single crystals

US8241519B2 · kind B2 · utility

3Cited by
4References
14Claims
0Family size

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Key dates

Filing dateMar 16, 2010
Grant dateAug 14, 2012
Priority date
Expiry dateMar 16, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/095
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A <110> domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(B1B2)O3—Pb(B3)O3, where B1 may be one ion or combination of Mg2+, Zn2+, Ni2+, Sc3+, In3+, Yb3+, B2 may be one ion or combination of Nb5+, Ta5+, W6+, and B3 may be Ti4+ or combination of Ti4+ with Zr4+ and/or Hf4+.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.