Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device
US8241930B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 31, 2011 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | May 31, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/543
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods are generally provided for manufacturing such thin film photovoltaic devices via sputtering a mixed phase layer from a target (e.g., at least including CdSOx, where x is 3 or 4) on a transparent conductive oxide layer and depositing a cadmium telluride layer on the mixed layer. The transparent conductive oxide layer is on a glass substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.