Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device
US8241938B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2010 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Nov 19, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a conductive oxide layer on a substrate are provided. The method can include sputtering a transparent conductive oxide layer (“TCO layer”) on a substrate from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10° C. to about 100° C. The TCO layer can then be annealed in an anneal temperature comprising cadmium at an annealing temperature of about 500° C. to about 700° C. The method of forming the TCO layer can be used in a method for manufacturing a cadmium telluride based thin film photovoltaic device, further including forming a cadmium sulfide layer over the transparent conductive oxide layer and forming a cadmium telluride layer over the cadmium sulfide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.