Sodium doping method and system for shaped CIGS/CIS based thin film solar cells

US8241943B1 · kind B1 · utility

Assignee

• Stion Corporation · US

Inventors

• Robert D. Wieting · San Jose, US
• Steven Aragon · Englewood, US
• Chester A. Farris, III · Yorba Linda, US

Key dates

• Filing date: May 5, 2010
• Grant date: Aug 14, 2012
• Expiry date: Jan 25, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/541

Abstract

A method of sodium doping in fabricating CIGS/CIS based thin film solar cells includes providing a shaped substrate member. The method includes forming a barrier layer over the surface region followed by a first electrode layer, and then a sodium bearing layer. A precursor layer of copper, indium, and/or gallium materials having an atomic ratio of copper/group III species no greater than 1.0 is deposited over the sodium bearing layer. The method further includes transferring the shaped substrate member to a second chamber and subjecting it to a thermal treatment process within an environment comprising gas-phase selenium species, followed by an environment comprising gas-phase sulfur species with the selenium species being substantially removed to form an absorber layer.