Method of forming an organic semiconducting device by a melt technique
US8241946B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2005 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Feb 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/623
Abstract
The present invention provides a method of forming a semiconducting device comprising an organic semiconducting material, which method comprises: heating a composition comprising the organic semiconducting material to a temperature at or above the melting point or glass transition temperature of the composition to form a melt; cooling the melt to a temperature below the melting point or glass transition temperature of the composition; and wherein a first substance or object capable of inhibiting and/or preventing dewetting is adjacent the composition before or during heating, or the composition further comprises an agent capable of inhibiting and/or preventing dewetting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.