Smooth electrode and method of fabricating same
US8242006B2 · kind B2 · utility
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2References
6Claims
0Family size
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Key dates
| Filing date | Dec 21, 2007 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Jun 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A smooth electrode is provided. The smooth electrode includes at least one metal layer having thickness greater than about 1 micron; wherein an average surface roughness of the smooth electrode is less than about 10 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.