Field effect transistor using diamond and process for producing the same
US8242511B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2006 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Dec 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a conventional diamond semiconductor element, because of high density of crystal defects, it is impossible to reflect the natural physical properties peculiar to a diamond, such as high thermal conductivity, high breakdown field strength, high-frequency characteristics and the like, in the transistor characteristics. By slightly shifting surface orientation of a diamond substrate in a [001] direction, a significant reduction in crystal defects peculiar to a diamond is possible. The equivalent effects are also provided by shifting surface orientation of a single-crystal diamond thin-film or channel slightly from a [001] direction. It is possible to obtain a significantly high transconductance gm as compared with that in a transistor produced using conventional surface orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.