Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device
US8242513B2 · kind B2 · utility
3Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 2008 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Mar 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48465
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.