Conversion LED
US8242528B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2008 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Jul 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8512
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A conversion LED is provided. The conversion LED may include a primary light source which emits in the short-wave radiation range below 420 nm, and a luminophore placed in front of it consisting of the BAM system as a host lattice for at least partial conversion of the light source's radiation into longer-wave radiation, wherein the BAM luminophore is applied as a thin layer having a thickness of at most 50 μm directly on the surface of the light source, the BAM luminophore having the general stoichiometry (M1−r Mgr)O*k(Al2O3), where r=0.4 to 0.6 and M=EAeEu1−e, with EA=Ba, Sr, Ca, and e=0.52 to 0.8, and k=1.5 to 4.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.