Patent · US Active

Conversion LED

US8242528B2 · kind B2 · utility

3Cited by
4References
20Claims
0Family size

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Key dates

Filing dateNov 17, 2008
Grant dateAug 14, 2012
Priority date
Expiry dateJul 24, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8512
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A conversion LED is provided. The conversion LED may include a primary light source which emits in the short-wave radiation range below 420 nm, and a luminophore placed in front of it consisting of the BAM system as a host lattice for at least partial conversion of the light source's radiation into longer-wave radiation, wherein the BAM luminophore is applied as a thin layer having a thickness of at most 50 μm directly on the surface of the light source, the BAM luminophore having the general stoichiometry (M1−r Mgr)O*k(Al2O3), where r=0.4 to 0.6 and M=EAeEu1−e, with EA=Ba, Sr, Ca, and e=0.52 to 0.8, and k=1.5 to 4.5.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.