Patent · US Active

Method and device for growing pseudomorphic A1InAsSb on InAs

US8242538B1 · kind B1 · utility

1Cited by
6References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 11, 2011
Grant dateAug 14, 2012
Priority date—
Expiry dateMay 11, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02631
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.