Storage element, method of manufacturing same, and semiconductor storage device
US8242552B2 · kind B2 · utility
2Cited by
0References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 23, 2010 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Aug 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Disclosed herein is a storage element including: a first electrode; a second electrode formed in a position opposed to the first electrode; and a variable-resistance layer formed so as to be interposed between the first electrode and the second electrode. The first electrode is a tubular object, and is formed so as to be thicker on an opposite side from the variable-resistance layer than on a side of the variable-resistance layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.