Patent · US Active

Electronic component with diffusion barrier layer

US8242599B2 · kind B2 · utility

0Cited by
4References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 9, 2008
Grant dateAug 14, 2012
Priority date
Expiry dateOct 11, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3011
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

An electronic component is described that includes a metallic layer on a substrate that is made of a semiconductor material and a diffusion barrier layer that is made of a material that has a small diffusion coefficient for the metal of the metallic layer which is formed between the metallic layer and the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.