Electronic component with diffusion barrier layer
US8242599B2 · kind B2 · utility
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4References
19Claims
0Family size
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Key dates
| Filing date | Jan 9, 2008 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Oct 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An electronic component is described that includes a metallic layer on a substrate that is made of a semiconductor material and a diffusion barrier layer that is made of a material that has a small diffusion coefficient for the metal of the metallic layer which is formed between the metallic layer and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.