Semiconductor device and method of fabricating semiconductor device
US8242610B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2009 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | May 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device including a semiconductor substrate on which at least one electrode pad is formed, a rewiring layer connected to the electrode pad, and an encapsulation part which encapsulates the semiconductor substrate, the electrode pad being formed of a first region including a connection part connected to the rewiring layer and a second region other than the first region, the device including: an insulating film provided on the semiconductor substrate, having an opening at which the first region in the electrode pad is exposed, and covering the second region of the electrode pad, wherein the rewiring layer is connected to the first region of the electrode pad exposed at the opening, and extends across the insulating film so as to cover the second region of the electrode pad from above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.