Thin film type varistor and a method of manufacturing the same
US8242875B2 · kind B2 · utility
5Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2008 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Mar 18, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49099
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.