Phase-change random access memory capable of reducing word line resistance
US8243495B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2009 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Apr 9, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase-change random access memory (PRAM) device capable of reducing a resistance of a word line may include a plurality of main word lines of a semiconductor memory device or PRAM bent n times in a layer different from a layer in which a plurality of sub-word lines are disposed. The semiconductor memory device or PRAM may further include jump contacts for connecting the plurality of cut sub-word lines. In a PRAM device including the plurality of main word lines and the plurality of sub-word lines being in different layers, the number of jump contacts for connecting the plurality of main word lines to a transistor of a sub-word line decoder is the same in each sub-word line or the plurality of main word lines are bent several times so that a parasitic resistance on a word line and power consumption may be reduced, and a sensing margin may be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.