Semiconductor storage device
US8243524B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2010 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Jan 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage device has a sense amplifier. The sense amplifier includes a first lower interconnection; a second interlayer insulation film formed on the first interlayer insulation film and top of the first interconnection; a contact interconnection formed in a direction perpendicular to a substrate plane of the semiconductor substrate so as to pass through the second interlayer insulation film, and connected to the first lower interconnection; a first upper interconnection formed on the second interlayer insulation film and connected to the contact interconnection disposed under the first upper interconnection; a dummy contact interconnection formed in a direction perpendicular to the substrate plane of the semiconductor substrate in the second interlayer insulation film, and adjacent to the contact interconnection; and a second upper interconnection formed on the second interlayer insulation film so as to extend in the first direction, and connected to the dummy contact interconnection disposed under the second upper interconnection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.