Non-volatile memory device
US8243530B2 · kind B2 · utility
6Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2010 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Oct 18, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/005
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device includes a feedback circuit and a precharge switching transistor. The feedback circuit generates a feedback signal based on a voltage level of a bitline during a precharge operation. The precharge switching transistor, in response to the feedback signal, controls a precharge current for precharging the bitline. The speed of the precharge operation may be increased and/or mismatch of the bias signals in precharging a plurality of bitlines may be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.