Semiconductor diffraction grating device and semiconductor laser
US8243768B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 12, 2010 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Oct 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor diffraction grating device includes a semiconductor substrate having a principal surface, a semiconductor core layer and a semiconductor cladding layer provided on the principal surface, and a chirped grating structure provided between the semiconductor core layer and the semiconductor cladding layer. The chirped grating structure includes a first region, a second region, and a third region arranged in that order in a predetermined axis direction, the first, second, and third regions including a plurality of projections constituting a chirped grating. The plurality of projections are provided at placement positions arranged with a predetermined pitch in the predetermined axis direction. The coupling coefficient κ of the chirped grating monotonically increases in the predetermined axis direction to a predetermined value in the first region, remains flat in the second region, and monotonically decreases in the predetermined axis direction from the predetermined value in the third region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.