Semiconductor device
US8244199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2010 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Feb 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
In view of achieving a cost reduction of an antenna switch, a technique is provided which can reduce harmonic distortion generated in the antenna switch as much as possible in particular even when the antenna switch is comprised of a field effect transistor formed over a silicon substrate.Each of a TX series transistor, an RX series transistor, and an RX shunt transistor is comprised of a low voltage MISFET, while a TX shunt transistor is comprised of a high voltage MISFET. Thus, by reducing the number of serial connections of the high voltage MISFETs constituting the TX shunt transistor, the nonuniformity of the voltage amplitudes applied to the respective serially-coupled high voltage MISFETs is suppressed. As a result, the generation of high-order harmonics can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.