Rank modulation for flash memories
US8245094B2 · kind B2 · utility
115Cited by
5References
58Claims
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Key dates
| Filing date | Nov 20, 2008 |
| Grant date | Aug 14, 2012 |
| Priority date | — |
| Expiry date | Mar 27, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
We investigate a novel storage technology, Rank Modulation, for flash memories. In this scheme, a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The resulting scheme eliminates the need for discrete cell levels, and overshoot errors when programming cells (a serious problem that reduces the writing speed), as well as mitigate the problem of asymmetric errors. We present schemes for Gray codes, rewriting and joint coding in the rank modulation paradigm.
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