Patent · US Active

Formation of deep pit areas and use thereof in fabrication of an optic recording medium

US8246845B2 · kind B2 · utility

0Cited by

3References

9Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Christophe Martinez · Grenoble, FR
Alain Fargeix · Meylan, FR

Key dates

Filing date	Jan 29, 2008
Grant date	Aug 21, 2012
Priority date	—
Expiry date	Apr 28, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG11B7/263
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A pit is formed from a stack comprising at least one first layer formed by a material able to change physical state and a second layer made of the same material as that forming the first layer, but in a different physical state. An area of the first layer is treated to make said area go from its initial physical state to the physical state corresponding to that of the second layer. A selective etching step is then performed to eliminate said area of the first layer and the area of the second layer initially covered by the treated area of the first layer. Advantageously, said material is a phase transition material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.