Method for forming micropattern
US8247029B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2008 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Aug 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0273
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The micropattern formation of the invention comprises forming a resist pattern, and then forming a carbon-containing film on the surface of the resist pattern, followed by ashing of the carbon-containing film and a portion of the resist surface constituting the resist pattern. Thus, the discharge state of ashing just after the initiation of discharge is so stabilized that the ashing rate distribution can be improved, and sensitive pattern slimming can be implemented with ease and high precision.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.