Process for the application of spin transition molecular materials in thin layers
US8247038B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Feb 19, 2007 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Apr 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/331
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This application relates to a process for the application of thin layers of substantially pure spin transition molecular materials while maintaining the hysteresis properties of the material. The process makes it possible to obtain a dense uniform surface with very low roughness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.