Patent · US Active

Method for the production of an optoelectronic component using thin-film technology

US8247259B2 · kind B2 · utility

22Cited by
5References
14Claims
0Family size

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Key dates

Filing dateNov 21, 2008
Grant dateAug 21, 2012
Priority date
Expiry dateNov 21, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/018

Abstract

On an epitaxy substrate (1), a layer structure (5, 6, 7) provided for light-emitting diodes or other optoelectronic components using thin-film technology is produced and provided with a first connecting layer (2), which comprises one or a plurality of solder materials. A second connecting layer (3) is applied over the whole area on a carrier (10) and permanently connected to the first connecting layer (2) by means of a soldering process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.