Method for the production of an optoelectronic component using thin-film technology
US8247259B2 · kind B2 · utility
22Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2008 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Nov 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
On an epitaxy substrate (1), a layer structure (5, 6, 7) provided for light-emitting diodes or other optoelectronic components using thin-film technology is produced and provided with a first connecting layer (2), which comprises one or a plurality of solder materials. A second connecting layer (3) is applied over the whole area on a carrier (10) and permanently connected to the first connecting layer (2) by means of a soldering process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.