Direct growth of metal nanoplates on semiconductor substrates
US8247325B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 6, 2009 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Mar 18, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Metal nanoplates are grown on n-type and p-type semiconductor wafer substrates through galvanic reactions between substantially pure aqueous metal solutions and the substrates. The morphology of the resulting metal nanoplates that protrude from the substrate can be tuned by controlling the concentration of the metal solution and the reaction time of the solution with the semiconductor wafer. Nanoplate size gradually increases with prolonged growth time and the nanoplate thicknesses increases in a unique stepwise fashion due to polymerization and fusion of adjacent nanoplates. Further, the roughness of the nanoplates can also be controlled. In a particular embodiment, Ag nanoplates are grown on a GaAs substrate through reaction with a solution of AgNO3 with the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.