Thin film interlayer in cadmium telluride thin film photovoltaic devices and methods of manufacturing the same
US8247683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2009 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Sep 28, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.