Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making

US8247686B2 · kind B2 · utility

Assignee

• PrimeStar Solar, Inc. · US

Inventors

• Scott Daniel Feldman-Peabody · Golden, US
• Robert Dwayne Gossman · Aurora, US

Key dates

• Filing date: May 31, 2011
• Grant date: Aug 21, 2012
• Expiry date: May 31, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and an absorber layer (e.g., a cadmium telluride layer) on the multi-layer n-type stack. The multi-layer n-type stack generally includes a first layer (e.g., a cadmium sulfide layer) and a second layer (e.g., a mixed phase layer). The multi-layer n-type stack can, in certain embodiments, include additional layers (e.g., a third layer, a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices.