Atom chip device

US8247760B2 · kind B2 · utility

Assignee

• Ben-Gurion University of the Negev · IL

Inventors

• Tal Efraim Ben David · Hogla, IL
• Yonathan Japha · Rehovot, IL
• Valery Dikovsky · Beer Sheva, IL
• Ron Folman · Rehovot, IL

Key dates

• Filing date: Aug 11, 2008
• Grant date: Aug 21, 2012
• Expiry date: Mar 10, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H05H3/04
• WIPO field: Chemical engineering
• WIPO sector: Chemistry

Abstract

Ultra-cold (nano-Kelvin) neutral atoms can be trapped, manipulated, and measured, using integrated current carrying micro-structures on a nearby surface (Atom Chips). This can be utilized for the realization of ultra-sensitive sensors and quantum computation devices based on the quantum mechanical properties of the trapped atoms. However, harmful processes arise from the interactions between the atoms and the nearby surface. According to the present invention these harmful processes can be highly suppressed by using electrically anisotropic materials. It is shown that time-independent trapping potential corrugation leading to fragmentation of the trapped atom cloud can be suppressed, and that time dependent noise processes arising from the coupling of atoms to the nearby surface, and leading to loss of atoms from the trap, heating and loss of coherence can be significantly reduced.