Semiconductor light-emitting device
US8247822B2 · kind B2 · utility
7Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2010 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Jan 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.