Power semiconductor module comprising a connection device with internal contact spring connection elements
US8247899B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2010 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Oct 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01R13/2421
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module comprises at least one power semiconductor component and a connection device which makes contact with the power semiconductor component. The connection device is composed of a layer assembly having at least one first electrically conductive layer facing the power semiconductor component and forming at least one first conductor track, and an insulating layer following in the layer assembly, and a second layer following further in the layer assembly and forming at least one second conductor track, the second layer being remote from the power semiconductor component. The power semiconductor module has at least one internal connection element, wherein the internal connection element is embodied as a contact spring having a first and a second contact section and a resilient section. The first contact section has a common contact area with a first or a second conductor track of the connection device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.