Phase-change memory device
US8248844B2 · kind B2 · utility
2Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2012 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Jan 10, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/754
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase-change memory device and its firing method are provided. The firing method of the phase-change memory device includes applying a writing current to phase-change memory cells, identifying a state of the phase-change memory cells after applying the writing current, and applying a firing current, in which an additional current is added to the writing current, to the phase-change memory cells in accordance with the state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.