Predictive read channel configuration
US8248856B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2010 |
| Grant date | Aug 21, 2012 |
| Priority date | — |
| Expiry date | Apr 28, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The read channel of a solid state non-volatile memory may be configured to compensate for shifts in the threshold voltages of memory cells of the memory. A log of write time information and write temperature information from one or more write operations is stored in a data unit header. The read channel configuration, which may include reference voltages used for the read operation, is determined using the write time information and the write temperature information. Memory cells of the data unit are read using the configured read channel. A historical profile spanning multiple write operations may also be developed and used to configure the read channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.