Barrier slurry for low-k dielectrics
US8252687B2 · kind B2 · utility
20Cited by
3References
46Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2009 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Sep 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.