High quality transparent conducting oxide thin films
US8253012B2 · kind B2 · utility
7Cited by
19References
7Claims
0Family size
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Key dates
| Filing date | Mar 17, 2008 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Jan 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B1/02
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm2/V-sec while simultaneously maintaining a high carrier density of ˜4.4e×1020 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.