Image sensor with multiple integration periods
US8253090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2008 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Apr 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/76
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of reading voltages from an image sensor having an array of pixels, each pixel having at least one photodiode connectable to a storage node, the method having: controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode above a first threshold to the storage node at the start and end of a first integration period and reading a first voltage at the storage node of each pixel in the row at the end of the first integration period; controlling of the pixels in the row to transfer charge accumulated in the photodiode above a second threshold to the storage node at the start and end of a second integration period longer than the first integration period, and reading a second voltage value at the storage node of each pixel in the row at the end of the second integration period; controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode to the storage node at the end of a third integration period longer than the first and second integration periods; comparing for each pixel in the row, the first voltage values with a reference voltage; and based on the comparison, for each pixel in the row, performing one of: determini…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.