Semiconductor element
US8253124B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2008 |
| Grant date | Aug 28, 2012 |
| Priority date | — |
| Expiry date | Oct 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This invention provides a semiconductor element which uses a plurality of carbon nanotubes as a current path, can reduce contact resistance of its electrode contact part, and has excellent electrical characteristics. This semiconductor element is characterized in that the semiconductor element includes a current path (16) comprised of a plurality of carbon nanotubes (18) and not less than two electrodes (14, 15) connected with the current path, wherein at least one or more of the electrodes is made of a mixture of a metal and a carbon material (17) having SP2 hybridized orbital, such as a multi-walled carbon nanotube, a glassy carbon, and graphite particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.